SI5504BDC-T1-GE3

Overview

The SI5504BDC-T1-GE3 is a dual N- and P-channel MOSFET in a leadless 1206-8 ChipFET package. It features TrenchFET technology with a drain-source voltage of 30 V for the N-channel and -30 V for the P-channel. The N-channel has a maximum on-resistance of 0.065 Ω at VGS = 10 V and a continuous drain current of 4 A (TC = 25 °C). The P-channel exhibits a maximum on-resistance of 0.140 Ω at VGS = -10 V and a continuous drain current of -3.7 A (TC = 25 °C). The device operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

• Dual-channel configuration integrating separate N-channel and P-channel enhancement-mode MOSFETs into a single compact component.
• Utilizes TrenchFET power MOSFET technology to achieve low on-state resistance and efficient switching performance.
• Leadless 1206-8 ChipFET package design provides thermal performance comparable to larger SO-8 packages while significantly reducing board area footprint.

Applications

• DC/DC converters for portable applications
• Load switch implementations

Procurement Notes

Verify the specific ordering suffix GE3 to confirm the component is both lead-free and halogen-free, as distinct from the standard E3 variant which is only lead-free. Ensure the datasheet revision matches the required manufacturing date, as Vishay documents are subject to change without notice. Confirm that the leadless package singulation process requirements align with the assembly capabilities, particularly regarding exposed copper tips.

Selection Notes

Select this component when space-constrained designs require dual-channel switching capabilities in a small surface-mount form factor. Evaluate the thermal resistance characteristics against the available PCB copper area, as the junction-to-ambient resistance is highly dependent on the pad pattern and board size. Verify that the gate threshold voltage and total gate charge parameters meet the drive requirements of the control circuitry.

Part Context

This part belongs to the Vishay Siliconix Si5504 series of dual-channel MOSFETs. It is manufactured using silicon technology and utilizes the 1206-8 ChipFET package, which shares the same outline dimensions as common 1206 passive components but offers power semiconductor performance. The marking code for the device is EF.

Replacement Considerations

The SI5504BDC-T1-E3 is a verified substitute that shares identical electrical specifications and package dimensions, differing only in the absence of the halogen-free compliance indicated by the GE3 suffix.

FAQ

What is the typical junction-to-foot thermal resistance for this device?

The typical junction-to-foot thermal resistance is 30 °C/W, with a maximum rating of 40 °C/W.

How does the package design impact thermal performance compared to an SO-8?

The 1206-8 ChipFET package achieves steady-state junction-to-ambient thermal resistance values identical to the SO-8 package on a 1-inch square FR4 board, despite having a significantly smaller body area.

Is manual soldering recommended for this component?

Manual soldering with a soldering iron is not recommended for this leadless component due to the specific construction of the exposed copper terminals.