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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 2.9A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：2.9A, 2.1A
- Rds On (Max) @ Id, Vgs：85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Si5504DC-T1-E3 is a complementary MOSFET pair in an 8-terminal ChipFET package. It integrates an N-channel and a P-channel device, each rated for a drain-source voltage of 30 V. The N-channel unit provides a continuous drain current of ±3.9 A with a maximum on-resistance of 0.085 Ω at 10 V gate drive. The P-channel counterpart supports ±2.9 A with a maximum on-resistance of 0.165 Ω under the same conditions. Operating junction temperatures range from -55 °C to +150 °C.
Feature Summary
- Complementary dual configuration integrating N-channel and P-channel transistors within a single leadless surface-mount footprint.
Applications
- Low-side and high-side switching circuits requiring matched complementary pairs.
Procurement Notes
Verify component authenticity by cross-referencing the manufacturer's datasheet document number and revision history against the physical marking code found on the package. Confirm that the ordering suffix matches the specific lead-free and halogen-free requirements defined in the official Vishay Siliconix documentation.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Ensure the application's duty cycle and ambient temperature remain within the absolute maximum ratings for continuous drain current and power dissipation. Validate that the required gate drive voltages align with the specified thresholds for optimal on-state performance.
Part Context
This component belongs to the Vishay Siliconix TrenchFET family, utilizing advanced planar technology to achieve low on-resistance. The ChipFET packaging design facilitates efficient heat transfer through exposed copper terminals, supporting compact board layouts while maintaining robust electrical isolation between the integrated N-channel and P-channel elements.
Replacement Considerations
Si5504DC-T1-GE3
FAQ
What is the maximum allowable gate-source voltage for this device?
The absolute maximum rating for both the N-channel and P-channel gate-source voltage is ±20 V.
How does the on-resistance change with temperature?
The on-resistance increases as the junction temperature rises, following a positive temperature coefficient characteristic typical of silicon MOSFETs.
Is the internal body diode symmetrical between channels?
No, the forward voltage and reverse recovery characteristics differ; the N-channel source-drain diode has a maximum forward voltage of 1.2 V, while the P-channel exhibits similar but distinct parameters.
