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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 4A/3.7A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4A, 3.7A
- Rds On (Max) @ Id, Vgs：55mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：285pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI5513CDC-T1-GE3 is a dual-channel MOSFET in a leadless 1206-8 ChipFET package. It integrates an N-channel and a P-channel device, both rated for a 20 V drain-source voltage (VDS). The N-channel transistor supports a continuous drain current of 4 A with a maximum on-resistance of 0.055 Ω at VGS = 4.5 V. The P-channel counterpart provides -3.7 A continuous current with a maximum RDS(on) of 0.150 Ω at VGS = -4.5 V. Operating within a junction temperature range of -55 °C to +150 °C, the component features a total gate charge of approximately 2.6 nC for the N-channel and 3.6 nC for the P-channel.
Feature Summary
- Dual-channel configuration combining N-channel and P-channel enhancement mode MOSFETs in a single leadless package
- Utilizes TrenchFET technology for optimized power performance and low on-state resistance
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load switching for portable electronic devices
Procurement Notes
Verify the specific ordering suffix when sourcing components. The GE3 designation indicates the part is lead-free and halogen-free, whereas the E3 suffix denotes lead-free status only. Confirm that the required environmental compliance matches the exact suffix to ensure correct material composition and regulatory adherence during procurement.
Selection Notes
Select this component for applications requiring complementary N- and P-channel switching within a compact footprint. The 1206-8 package offers thermal performance comparable to larger SO-8 packages while significantly reducing board area. Ensure the design accommodates the exposed copper terminals on the package bottom for proper soldering and thermal dissipation.
Part Context
This component belongs to the Si5513CDC series of dual-channel MOSFETs manufactured by Vishay Siliconix. It is specifically designed as a high-performance alternative to discrete single-channel solutions, consolidating two transistors into one surface-mount assembly to simplify layout and improve reliability in space-constrained designs.
Replacement Considerations
Direct replacements must match the 1206-8 ChipFET package outline and pinout. Verify that substitute parts maintain equivalent VDS ratings of 20 V and compatible RDS(on) values for both N-channel and P-channel configurations to ensure circuit functionality.
