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The SI5915DC-T1-GE3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-SMD, Flat Leads (1206-8 ChipFET) package. The device supports a drain-source voltage of -8V and a continuous drain current of 3.4A. It operates within a temperature range of -55°C to +150°C junction temperature. The component features surface mount installation and complies with RoHS standards.
Verify the specific suffix GE3 against official Vishay documentation to confirm lead-free compliance and material specifications. Confirm the active status of this component as obsolescence notifications may apply. Ensure the 1206-8 footprint matches your PCB layout requirements before procurement.
Select this component when a compact dual P-channel solution is required for low-voltage applications. The 1206-8 form factor offers a small footprint suitable for dense layouts. Consider the -8V rating and 3.4A current limit to ensure adequate headroom for the target load conditions.
This part belongs to the Vishay Siliconix SI59xx series of dual MOSFET arrays. It is designed for applications requiring multiple channel control in a minimal space. The ChipFET packaging provides thermal efficiency and mechanical stability for automated assembly processes.
Consult official Vishay cross-reference guides for verified substitutes. Generic equivalents may not match the specific electrical characteristics or package dimensions of the original component.