SI5915DC-T1-GE3

SI5915DC-T1-GE3

$0.60
  • Description:MOSFET 2P-CH 8V 3.4A 1206-8
  • Series:TrenchFET®

SKU:51b192c8bf37 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 8V 3.4A 1206-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):8V
  • Current - Continuous Drain (Id) @ 25°C:3.4A
  • Rds On (Max) @ Id, Vgs:70mOhm @ 3.4A, 4.5V
  • Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:1206-8 ChipFET™
  • Grade:-
  • Qualification:-

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SI5915DC-T1-GE3

Overview

The SI5915DC-T1-GE3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-SMD, Flat Leads (1206-8 ChipFET) package. The device supports a drain-source voltage of -8V and a continuous drain current of 3.4A. It operates within a temperature range of -55°C to +150°C junction temperature. The component features surface mount installation and complies with RoHS standards.

Feature Summary

  • Dual P-channel configuration for space-efficient circuit design
  • TrenchFET technology for optimized performance
  • Compact 1206-8 ChipFET package for surface mount applications

Applications

  • Battery protection circuits
  • Power management modules
  • Load switching applications

Procurement Notes

Verify the specific suffix GE3 against official Vishay documentation to confirm lead-free compliance and material specifications. Confirm the active status of this component as obsolescence notifications may apply. Ensure the 1206-8 footprint matches your PCB layout requirements before procurement.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. The 1206-8 form factor offers a small footprint suitable for dense layouts. Consider the -8V rating and 3.4A current limit to ensure adequate headroom for the target load conditions.

Part Context

This part belongs to the Vishay Siliconix SI59xx series of dual MOSFET arrays. It is designed for applications requiring multiple channel control in a minimal space. The ChipFET packaging provides thermal efficiency and mechanical stability for automated assembly processes.

Replacement Considerations

Consult official Vishay cross-reference guides for verified substitutes. Generic equivalents may not match the specific electrical characteristics or package dimensions of the original component.

SI5915DC-T1-GE3SI5915DC-T1-GE3
$0.60
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