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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 6A PPAK CHIPFET
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：58mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：480pF @ 10V
- Power - Max：10.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® ChipFET™ Dual
- Supplier Device Package：PowerPAK® ChipFet Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI5947DU-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK ChipFET package with a maximum drain-source voltage of -20 V and a continuous drain current of -6 A at 25 °C case temperature. The on-state resistance is typically 0.058 Ω at VGS = -4.5 V and -3.6 A, or 0.100 Ω at VGS = -2.5 V and -1 A. Total gate charge is typically 5.5 nC at VGS = -4.5 V. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual P-channel configuration in a single leadless package
- TrenchFET power MOSFET technology for low on-resistance
- Thermally enhanced PowerPAK ChipFET package with thin profile
Applications
- Load switching for portable devices
- Power amplifier (PA) switching
- Charger switching applications
Procurement Notes
Verify the component against the official datasheet document number 73695 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free status. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component for circuits requiring dual P-channel switching in a compact form factor. Evaluate thermal performance based on the specified junction-to-case resistance when designing heat dissipation paths. Confirm that the gate drive voltage meets the threshold requirements for the desired on-state resistance level.
Part Context
This component belongs to the Vishay Siliconix Si5947DU series of dual P-channel MOSFETs. It utilizes the PowerPAK ChipFET package, which provides a small footprint and low profile suitable for space-constrained portable electronics designs.
Replacement Considerations
SI5947DU-GE3
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum gate-source voltage is ±12 V.
Is the device compliant with halogen-free standards?
Yes, the device is halogen-free according to IEC 61249-2-21 definition.
What is the typical total gate charge at VGS = -4.5 V?
The typical total gate charge is 5.5 nC when tested at VDS = -10 V, VGS = -4.5 V, and ID = -5 A.
