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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 3.1A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：3.1A
- Rds On (Max) @ Id, Vgs：86mOhm @ 3.1A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The SI5975DC-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a -20V drain-source voltage (Vds) and an 8V gate-source voltage (Vgs). The device operates in the ChipFET-8 package, specifically the 1206-8 form factor. Key electrical parameters include a continuous drain current of 4.5A and a maximum power dissipation of 1.4W. The typical on-resistance (Rds(on)) is specified at 25 milliohms under standard test conditions. The component supports surface mount installation and functions within a temperature range from -55°C to +155°C.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs into a single compact package for space-constrained designs.
- TrenchFET technology implementation providing low on-resistance and optimized switching performance.
- ChipFET-8 packaging designed for high-density surface mount applications with standardized footprint compatibility.
Applications
- Low-voltage DC-to-DC converter circuits requiring synchronous rectification.
- Load switching applications in portable electronic devices.
- Power management modules for automotive infotainment systems.
Procurement Notes
Verify the specific ordering suffix and tape-and-reel specifications against the manufacturer's latest datasheet before procurement. Confirm that the ChipFET-8 pad layout matches your PCB design guidelines. Ensure compliance with RoHS directives as indicated in the official documentation. Check for any end-of-life notifications or obsolescence alerts associated with this part number prior to finalizing supply agreements.
Selection Notes
Select this component when a dual N-channel configuration is required within a 1206-8 footprint. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation for the intended load current. Compare the Rds(on) value against system efficiency requirements. Verify that the -20V Vds rating exceeds the maximum circuit voltage with appropriate safety margins.
Part Context
This part belongs to the Vishay Siliconix SI59xx series of dual MOSFETs. It shares the ChipFET-8 package family with other variants offering different voltage and current ratings. The series is characterized by its small outline profile and suitability for automated surface mount assembly processes common in modern electronics manufacturing.
Replacement Considerations
Consult the manufacturer's datasheet for officially recommended alternative part numbers within the same product line. Verify pinout compatibility and electrical parameter equivalence before substitution. Generic equivalents may not match the specific thermal or switching characteristics of the original component.
