SI6954ADQ-T1-BE3

$1.46

Description：MOSFET 2N-CH 30V 3.1A 8TSSOP
Series：TrenchFET®

SKU:dfb26e881ed9 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 3.1A 8TSSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Rds On (Max) @ Id, Vgs：53mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：830mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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SI6954ADQ-T1-BE3

Overview

The Vishay Siliconix Si6954ADQ-T1-BE3 is a dual N-channel Power MOSFET utilizing TrenchFET technology, housed in a TSSOP-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 3.4 A at 25 °C. The device exhibits a maximum on-state resistance of 0.053 Ω at VGS = 10 V and 0.075 Ω at VGS = 4.5 V. Gate threshold voltage is specified with a minimum of 1 V. Thermal performance includes a junction-to-ambient thermal resistance of up to 150 °C/W under steady-state conditions. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration within a compact TSSOP-8 footprint
TrenchFET power architecture for low on-resistance
Low gate threshold voltage enabling efficient battery switching

Applications

Battery protection circuits
Power management modules
Small form factor computing devices

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm compliance attributes such as halogen-free status or lead content. Confirm that the BE3 designation aligns with the required RoHS specifications for the target assembly process. Cross-reference the datasheet revision date to ensure all electrical parameters match the intended design requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel solution is required in a TSSOP-8 package with a 30 V rating. Evaluate the 0.053 Ω RDS(on) at VGS = 10 V against system drive capabilities. Ensure the 150 °C operating temperature range meets environmental constraints. Verify that the 3.4 A continuous current rating satisfies peak load demands without exceeding thermal limits.

Part Context

This part belongs to the Vishay LITTLE FOOT series, designed to reduce printed circuit board area compared to traditional SOIC packages. The TSSOP-8 package offers a lower profile suitable for space-constrained applications like PCMCIA cards. The dual-die layout integrates two independent N-channel MOSFETs into a single standard IC package.