SI7104DN-T1-E3

$2.47

Description：MOSFET N-CH 12V 35A PPAK 1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0e17ce730d28 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI7104DN-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 12V 35A PPAK 1212-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7104DN-T1-E3

Description：MOSFET N-CH 12V 35A PPAK 1212-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：3.7mOhm @ 26.1A, 4.5V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：70 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2800 pF @ 6 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 52W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8
Package / Case：PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SI7104DN-T1-E3

SI7104DN-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7104DN-T1-E3 is a single N-channel Power MOSFET utilizing TrenchFET technology. It features a 12 V drain-source breakdown voltage and a maximum continuous drain current of 35 A at a case temperature of 25 °C. The device exhibits a low on-state resistance of 3.7 mΩ at VGS = 4.5 V and 7 mΩ at VGS = 2.5 V. Total gate charge is typically 23 nC at VGS = 4.5 V. It is housed in a leadless PowerPAK 1212-8 surface-mount package with a profile of approximately 1.07 mm.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology for optimized performance
Low thermal resistance PowerPAK 1212-8 package design
Leadless construction with exposed copper drain pad
100% Rg tested for reliability

Single FETs, MOSFETs Applications

Synchronous rectification circuits
Point-of-load DC/DC conversion modules

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against procurement requirements. The -E3 suffix indicates lead-free composition, while the -GE3 suffix denotes both lead-free and halogen-free compliance. Confirm that the selected variant aligns with environmental regulations applicable to the target assembly process.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current density within a constrained footprint. The PowerPAK 1212-8 package provides superior thermal dissipation compared to standard SO-8 or TSSOP packages. Ensure PCB layout maximizes the exposed drain pad area to leverage the low junction-to-case thermal resistance effectively.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix TrenchFET family, designed for efficient power switching. The PowerPAK 1212-8 package represents an evolution in surface-mount technology, offering a significantly smaller footprint than traditional SO-8 packages while maintaining comparable thermal performance characteristics.