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SI7149ADP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 50A PPAK SO-8. Review the specifications below when checking this part for your BOM.
The Si7149ADP-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, housed in a PowerPAK SO-8 package. It features a drain-source voltage of -30 V and a continuous drain current of -50 A at TC = 25 °C. The on-state resistance is 0.0052 Ω at VGS = -10 V and -15 A, or 0.0095 Ω at VGS = -4.5 V and -10 A. Gate-source voltage limits are ±25 V. Total gate charge is 135 nC max at VGS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C.
Verify the specific ordering suffix 'T1' corresponds to the reel packaging configuration required for your assembly line. Confirm RoHS compliance status through official Vishay documentation prior to procurement. Ensure the component meets material categorization definitions for compliance as outlined in the datasheet.
Select this component when a P-channel device with a -30 V rating and high current capability is needed. The PowerPAK SO-8 package offers thermal performance comparable to DPAK packages while maintaining an SO-8 footprint. Verify that the drive voltage supports the specified RDS(on) thresholds for optimal efficiency.
This part belongs to the Vishay Siliconix TrenchFET family, designed for low voltage drop applications. The Si7149ADP utilizes advanced trench gate technology to achieve superior on-resistance characteristics within a compact surface-mount package suitable for space-constrained electronic designs.
Check pinout compatibility and thermal resistance values against existing designs. Verify that the replacement device meets or exceeds the -30 V breakdown voltage and current handling requirements of the original circuit specifications.
The extended gate-source voltage rating is ±25 V.
Yes, the datasheet specifies that 100% of units are tested for RG and UIS.
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