Single FETs, MOSFETs SI7149ADP-T1-GE3 product image

SI7149ADP-T1-GE3

$0.88
  • Description:MOSFET P-CH 30V 50A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:9633b9b017ba Category: Brand:

  
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SI7149ADP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 50A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7149ADP-T1-GE3

  • Description:MOSFET P-CH 30V 50A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:5125 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Ta), 48W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7149ADP-T1-GE3

SI7149ADP-T1-GE3

Single FETs, MOSFETs Overview

The Si7149ADP-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, housed in a PowerPAK SO-8 package. It features a drain-source voltage of -30 V and a continuous drain current of -50 A at TC = 25 °C. The on-state resistance is 0.0052 Ω at VGS = -10 V and -15 A, or 0.0095 Ω at VGS = -4.5 V and -10 A. Gate-source voltage limits are ±25 V. Total gate charge is 135 nC max at VGS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • TrenchFET power MOSFET architecture for low on-resistance
  • Extended gate-source voltage rating up to ±25 V
  • 100% tested for gate charge and unclamped inductive switching

Single FETs, MOSFETs Applications

  • Battery switches
  • Load switches
  • Adaptor switches
  • Notebook computers
  • Notebook battery packs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T1' corresponds to the reel packaging configuration required for your assembly line. Confirm RoHS compliance status through official Vishay documentation prior to procurement. Ensure the component meets material categorization definitions for compliance as outlined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel device with a -30 V rating and high current capability is needed. The PowerPAK SO-8 package offers thermal performance comparable to DPAK packages while maintaining an SO-8 footprint. Verify that the drive voltage supports the specified RDS(on) thresholds for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix TrenchFET family, designed for low voltage drop applications. The Si7149ADP utilizes advanced trench gate technology to achieve superior on-resistance characteristics within a compact surface-mount package suitable for space-constrained electronic designs.

Single FETs, MOSFETs Replacement Considerations

Check pinout compatibility and thermal resistance values against existing designs. Verify that the replacement device meets or exceeds the -30 V breakdown voltage and current handling requirements of the original circuit specifications.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The extended gate-source voltage rating is ±25 V.

Is the device tested for unclamped inductive switching?

Yes, the datasheet specifies that 100% of units are tested for RG and UIS.

SI7149ADP-T1-GE3SI7149ADP-T1-GE3
$0.88
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