SI7212DN-T1-E3

Overview

The Vishay Siliconix SI7212DN-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a continuous drain current of 6.8 A at 25 °C. The device exhibits a maximum on-state resistance of 0.036 Ω at VGS = 10 V and 0.039 Ω at VGS = 4.5 V. Packaged in a leadless PowerPAK 1212-8, it offers a gate charge of 71 nC typ. Thermal performance includes a junction-to-case resistance of 4.3 °C/W typical. Operating temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration with independent Gate 1, Drain 1, Source 1, Gate 2, Drain 2, and Source 2 terminals.
• Space-saving PowerPAK 1212-8 package optimized for fast switching applications.
• Halogen-free construction compliant with IEC 61249-2-21 definition.

Applications

• Synchronous rectification
• Intermediate driver circuits

Procurement Notes

Verify the specific ordering suffix against official documentation. The E3 suffix indicates lead-free composition. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the component matches the exact datasheet revision required for your design specifications before finalizing procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching. Evaluate the 0.036 Ω RDS(on) at VGS = 10 V for standard logic levels, or the 0.039 Ω at VGS = 4.5 V if driving from lower voltage sources. Verify that the 6.8 A continuous current rating meets the thermal dissipation requirements of the target PCB layout.

Part Context

This part belongs to the Vishay Siliconix SI7 series of power MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within a small footprint. The dual configuration allows for efficient half-bridge or synchronous rectifier topologies in space-constrained designs.

Replacement Considerations

Consult the official datasheet for recommended alternatives. Cross-referencing requires matching the 30 V rating, dual channel configuration, and PowerPAK 1212-8 package dimensions to ensure physical and electrical compatibility.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for the gate-source voltage (VGS) is ± 12 V.

How does the on-resistance vary with gate voltage?

The maximum RDS(on) is 0.036 Ω at VGS = 10 V and increases to 0.039 Ω at VGS = 4.5 V under specified test conditions.

Is the PowerPAK 1212-8 package leaded?

No, the PowerPAK 1212-8 is a leadless surface-mount package. The end of the lead terminal is exposed copper as a result of the singulation process.