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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 6A PPAK 1212
- Series：TrenchFET® Gen III
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Rds On (Max) @ Id, Vgs：26.4mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：40nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1425pF @ 15V
- Power - Max：2.6W (Ta), 23W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® 1212-8 Dual
- Supplier Device Package：PowerPAK® 1212-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7223DN-T1-GE3 is a dual P-channel power MOSFET utilizing TrenchFET Gen III technology. It features a -30 V drain-source voltage rating and a maximum continuous drain current of -6 A at 25 °C case temperature. The device offers a typical on-state resistance of 0.022 Ω at VGS = -10 V, with a total gate charge of 26.3 nC. Packaged in a thermally enhanced PowerPAK 1212-8 footprint, it supports an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- TrenchFET Gen III p-channel architecture for optimized switching performance
- PowerPAK 1212-8 package provides a significantly smaller footprint compared to SO-8
- Thermally enhanced leadless design for efficient heat dissipation
- Verified reliability through 100% Rg and UIS testing
Applications
- Load switch circuits
- Battery protection systems
- Adapter and charger switches
- Hand-held and mobile devices
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Ensure that the component matches the intended thermal and electrical specifications for the target application environment. Cross-reference datasheet revision numbers to validate parameter accuracy before finalizing procurement decisions.
Selection Notes
Select this component for applications requiring compact dual P-channel switching solutions. Evaluate the thermal resistance characteristics relative to the expected ambient conditions. Confirm that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power management. The PowerPAK 1212-8 package is engineered for surface-mount assembly, offering improved thermal performance over traditional plastic packages while maintaining a minimal board area footprint.
Replacement Considerations
Consult official substitution lists for verified alternatives. Verify pinout compatibility and electrical parameters before replacing components in existing designs.
