SI7228DN-T1-GE3

$0.78

Description：MOSFET 2N-CH 30V 26A PPAK 1212
Series：TrenchFET®

SKU:d6dd2fd32ec1 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 26A PPAK 1212
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：26A
Rds On (Max) @ Id, Vgs：20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：480pF @ 15V
Power - Max：23W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8 Dual
Supplier Device Package：PowerPAK® 1212-8 Dual
Grade：-
Qualification：-

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SI7228DN-T1-GE3

Overview

The Si7228DN-T1-GE3 is a dual N-channel 30-V (D-S) MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features an RDS(on) of 0.020 Ω at VGS = 10 V and 0.025 Ω at VGS = 4.5 V, with a continuous drain current of 26 A at TC = 25 °C. The device has a typical total gate charge of 4.1 nC at VGS = 4.5 V and 8.5 nC at VGS = 10 V. Packaged in a leadless PowerPAK 1212-8 surface-mount format, it supports an operating junction temperature range of -55 to 150 °C.

Feature Summary

Dual N-channel configuration within a compact PowerPAK 1212-8 package
TrenchFET power MOSFET architecture for optimized performance
Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definition

Applications

Synchronous rectification
Notebook system power
Point-of-load (POL) conversion
Low current DC/DC converters

Procurement Notes

Verify the ordering suffix '-T1-GE3' confirms lead-free and halogen-free compliance per the datasheet. Confirm the specific manufacturer documentation matches Document Number 64806. Ensure the component is sourced as a genuine Vishay Siliconix product to guarantee adherence to the specified electrical parameters and thermal characteristics.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in space-constrained designs. The PowerPAK 1212-8 package offers superior thermal performance compared to standard SMT packages like SO-8 or TSSOP-8. Evaluate the low gate charge and on-resistance values against the specific switching frequency and load requirements of the target circuit design.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power switching. The Si7228DN specifically integrates two independent N-channel MOSFETs into a single leadless PowerPAK 1212-8 footprint. This integration reduces board space while maintaining robust thermal dissipation capabilities suitable for modern portable electronics.