ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
SI7344DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 11A PPAK SO-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7344DP-T1-E3
- Description：MOSFET N-CH 20V 11A PPAK SO-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SO-8
- Package / Case：PowerPAK® SO-8
Single FETs, MOSFETs datasheet and documents for SI7344DP-T1-E3
Single FETs, MOSFETs Overview
The Vishay Siliconix Si7344DP-T1-E3 is an N-channel MOSFET featuring a 20-V drain-source voltage rating. It utilizes TrenchFET technology within a leadless PowerPAK SO-8 package. The device exhibits a maximum on-state resistance of 0.008 Ω at VGS = 10 V and 0.012 Ω at VGS = 4.5 V. Continuous drain current capabilities are rated at 17 A at 25 °C and 14 A at 70 °C. Maximum power dissipation reaches 4.1 W at 25 °C. Operating junction temperatures range from -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture optimized for PWM applications
- Leadless PowerPAK SO-8 package with low thermal resistance
- Low profile construction measuring 1.07 mm in height
Single FETs, MOSFETs Applications
- DC/DC conversion high-side switching
- Synchronous rectification circuits
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Vishay datasheet Document Number 72128, Revision S-51773-Rev. B. Confirm that the part number suffix indicates lead-free compliance. Ensure the PowerPAK SO-8 package matches the required footprint dimensions. Check for any specific handling instructions regarding the exposed copper terminals during soldering processes.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage synchronous rectification where minimal conduction loss is critical. The low gate charge supports efficient high-frequency PWM operation. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values. Verify compatibility with standard 4.5 V or 10 V logic gate drive signals for optimal performance.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency power switching. The PowerPAK SO-8 package provides a compact surface-mount solution suitable for space-constrained designs. The device integrates advanced silicon technology to minimize on-resistance while maintaining robust reliability standards.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's documentation for verified alternative part numbers. Cross-reference specifications such as voltage ratings, current capabilities, and package dimensions before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
