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SI7625DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 35A PPAK1212-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI7625DN-T1-GE3
- Description：MOSFET P-CH 30V 35A PPAK1212-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：126 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4427 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：3.7W (Ta), 52W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® 1212-8
- Package / Case：PowerPAK® 1212-8
Single FETs, MOSFETs datasheet and documents for SI7625DN-T1-GE3
Single FETs, MOSFETs Overview
The SI7625DN-T1-GE3 is a Vishay Siliconix P-channel MOSFET utilizing TrenchFET technology. It features a -30 V drain-source voltage and a maximum on-resistance of 0.0070 Ω at VGS = -10 V. The device supports a continuous drain current of -35 A and includes 100% gate resistance and unclamped inductive switching (UIS) testing. It is housed in a leadless PowerPAK 1212-8 package with an exposed copper thermal pad.
Single FETs, MOSFETs Feature Summary
- TrenchFET power MOSFET architecture
- Leadless PowerPAK 1212-8 surface mount package
- Exposed copper thermal pad for efficient heat dissipation
- 100% tested for gate resistance and unclamped inductive switching
Single FETs, MOSFETs Applications
- Notebook adapter switch
- Notebook load switch
Single FETs, MOSFETs Procurement Notes
Verify the component against the official Vishay datasheet document number 65737 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free configuration. Validate that the PowerPAK 1212-8 package dimensions align with the target PCB footprint requirements before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-resistance and high current handling within a compact form factor. The exposed copper bottom pad necessitates specific PCB layout considerations for optimal thermal performance. Verify that the operating junction temperature remains within the specified range during design validation.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix P-channel MOSFET portfolio, specifically designed for space-constrained power switching applications. The PowerPAK 1212-8 package provides superior thermal characteristics compared to standard SO-8 packages while maintaining a small footprint suitable for portable electronics.
Single FETs, MOSFETs Replacement Considerations
Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully when evaluating alternative components from other manufacturers.
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