SI7842DP-T1-E3

$1.33

Description：MOSFET 2N-CH 30V 6.3A PPAK SO8
Series：LITTLE FOOT®

SKU:6f1b88060659 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 6.3A PPAK SO8
Series：LITTLE FOOT®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.3A
Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

Download product information

SI7842DP-T1-E3

Overview

The SI7842DP-T1-E3 is a single N-channel silicon MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-SO-8 surface-mount package. The device features a drain-source voltage rating of 60 V and a continuous drain current of 6.2 A at ambient temperature. Key electrical parameters include a maximum on-resistance of 22 milliohms at 10.3 A with a 10 V gate drive, and a gate charge of 27 nC at 10 V. The component supports a maximum power dissipation of 1.8 W and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

TrenchFET technology for optimized performance
Surface-mount PowerPAK-SO-8 packaging
Single N-channel configuration

Applications

DC-DC converter circuits
Power management systems
Load switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm RoHS compliance and lead-free status. Confirm availability as the component may be subject to obsolescence or limited supply constraints. Ensure the selected distributor provides valid traceability data for quality assurance purposes.

Selection Notes

Evaluate the thermal resistance characteristics of the PowerPAK-SO-8 package for adequate heat dissipation in the target application. Verify that the gate drive voltage meets the minimum requirements for optimal Rds(on) performance. Consider the total gate charge when designing driver circuits for high-frequency switching operations.

Part Context

This component belongs to the SI78xx series of Vishay Siliconix MOSFETs. It shares the PowerPAK-SO-8 form factor with other devices in the family but differs in voltage and current ratings. The part number includes an E3 suffix indicating environmental compliance.