SI7846DP-T1-E3

$1.53

Description：MOSFET N-CH 150V 4A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4ec2bc0891db Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI7846DP-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 150V 4A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI7846DP-T1-E3

Description：MOSFET N-CH 150V 4A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：150 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：50mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.9W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SI7846DP-T1-E3

SI7846DP-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI7846DP-T1-E3 is a single N-channel MOSFET utilizing TrenchFET technology. It features a PowerPAK SO-8 leadless package with a maximum drain-source voltage of 150 V and a gate-source voltage rating of ±20 V. The device provides a continuous drain current of 6.7 A at 25 °C ambient temperature, increasing to 24.5 A at case temperatures of 25 °C. The on-state resistance is specified at 0.050 Ω when the gate-source voltage is 10 V and the drain current is 5 A.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology optimized for fast switching in PWM applications
PowerPAK SO-8 leadless package providing low thermal resistance and a compact profile
Halogen-free construction compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

Primary side switching for high-density DC/DC converters
Telecom and server 48 V DC/DC power supplies
Industrial and 42 V automotive electronic systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and specific ordering suffixes such as GE3 or E3 against official datasheets. Validate that the PowerPAK SO-8 package matches required PCB land patterns. Ensure storage conditions prevent moisture absorption prior to soldering processes.

Single FETs, MOSFETs Selection Notes

Evaluate thermal management requirements based on junction-to-ambient resistance values under steady-state conditions. Compare continuous drain current ratings against expected load profiles at various operating temperatures. Assess gate charge characteristics to determine driver capability requirements. Verify compatibility with standard SO-8 footprint layouts if direct substitution is planned.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix TrenchFET family designed for efficient power switching. The PowerPAK SO-8 package offers thermal performance comparable to larger DPAK packages while maintaining the smaller footprint of a standard SO-8. This design allows for higher die sizes within a constrained surface area, improving overall system power density.