SI7900AEDN-T1-GE3

Overview

The Vishay Siliconix SI7900AEDN-T1-GE3 is a dual N-channel MOSFET with a common drain configuration, rated for a 20 V drain-source voltage. It utilizes the PowerPAK 1212-8 surface-mount package and TrenchFET technology. The device supports low-voltage gate drive, featuring a maximum on-resistance of 0.036 Ω at VGS = 1.8 V. Continuous drain current reaches 8.5 A at TA = 25 °C, while total gate charge is typically 10.5 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual N-channel architecture with common drain connection
• TrenchFET power MOSFET technology optimized for 1.8 V gate drive
• PowerPAK 1212-8 package providing ultra-low thermal resistance and a 1.07 mm profile

Applications

• Protection switch for 1-2 Li-ion batteries

Procurement Notes

Verify the component against the official Vishay datasheet (Document Number: 72287) to confirm electrical parameters and physical dimensions. Ensure the ordering suffix matches the required lead-free and halogen-free specifications. Cross-reference pinout configurations with application note AN822 for proper PCB land pattern implementation.

Selection Notes

Select this component for applications requiring low thermal impedance in space-constrained designs. The common drain topology allows shared source connections between channels. Evaluate the 0.036 Ω RDS(on) at 1.8 V VGS to ensure compatibility with low-voltage logic controllers or battery management systems.

Part Context

This part belongs to the Si7900AEDN series manufactured by Vishay Siliconix. It is housed in the PowerPAK 1212-8 package, which offers superior thermal performance compared to standard SO-8 packages. The product line emphasizes high efficiency through minimized junction-to-case thermal resistance.

Replacement Considerations

Consult Vishay documentation for verified substitutes within the same family. No alternative part numbers are confirmed in the provided source material.