SI7922DN-T1-E3

$2.13

Description：MOSFET 2N-CH 100V 1.8A PPAK 1212
Series：TrenchFET®

SKU:4957d768448e Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 1.8A PPAK 1212
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：1.8A
Rds On (Max) @ Id, Vgs：195mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.3W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® 1212-8 Dual
Supplier Device Package：PowerPAK® 1212-8 Dual
Grade：-
Qualification：-

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SI7922DN-T1-E3

Overview

The Si7922DN-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK 1212-8 package with dimensions of 3.30 mm x 3.30 mm. The device has a drain-source voltage (VDS) rating of 100 V and a gate-source voltage (VGS) limit of ± 20 V. At VGS = 10 V, the maximum on-state resistance (RDS(on)) is 0.195 Ω at a continuous drain current (ID) of 2.5 A. At VGS = 6 V, RDS(on) is 0.230 Ω at an ID of 2.3 A. The maximum power dissipation is 2.6 W at TA = 25 °C. The operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

Dual N-channel configuration in a compact PowerPAK 1212-8 surface-mount package
TrenchFET technology optimized for PWM applications
Low thermal resistance design providing performance comparable to SO-8 in one-third the space

Applications

DC/DC primary-side switching
48 V battery monitoring systems

Procurement Notes

Verify the specific ordering suffix when purchasing components. The E3 suffix indicates lead-free construction. The GE3 suffix denotes both lead-free and halogen-free compliance. Confirm that the required environmental specifications align with the selected variant before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-voltage isolation in a minimal footprint. Evaluate the thermal requirements against the specified junction-to-ambient resistance values. Ensure the gate drive voltage supports the desired on-resistance characteristics, as performance varies between 6 V and 10 V gate biases.

Part Context

This part belongs to the Vishay Siliconix Si79xx series of dual MOSFETs. It utilizes the PowerPAK 1212-8 package, which offers a significantly smaller footprint than standard SO-8 packages while maintaining similar thermal dissipation capabilities through direct die attachment to the substrate.

Replacement Considerations

Check for availability of the halogen-free variant, Si7922DN-T1-GE3, if environmental regulations require it. Verify pinout compatibility if substituting with other dual MOSFETs in the same package family.