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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 60A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：60A
- Rds On (Max) @ Id, Vgs：5.8mOhm @ 18.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2300pF @ 20V
- Power - Max：46W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7938DP-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and a maximum on-state resistance of 5.8 mΩ at VGS = 10 V. The device supports a continuous drain current of 60 A and operates within a junction temperature range of -55 °C to +150 °C. Packaged in a leadless PowerPAK SO-8 format, it includes two independent channels with shared source connections.
Feature Summary
- Dual N-channel configuration with integrated body diodes
- Leadless PowerPAK SO-8 package for optimized thermal dissipation
- TrenchFET power MOSFET architecture
- Validated for 100% gate resistance and unclamped inductive switching
Applications
- Point-of-load (POL) converter circuits
- DC/DC conversion modules
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. Confirm that the component matches the exact datasheet revision required for your design specifications. Ensure all technical parameters align with your system's operational limits before finalizing procurement decisions.
Selection Notes
Evaluate the thermal performance based on the intended PCB copper area and mounting conditions. Consider the junction-to-case thermal resistance when designing heatsinking solutions. Verify that the gate charge characteristics match the driving capabilities of the control circuitry for optimal switching efficiency.
Part Context
This component belongs to the Vishay Siliconix Si79 series of dual N-channel MOSFETs. It shares the PowerPAK SO-8 footprint with other devices in the family but offers distinct electrical ratings tailored for high-current applications requiring compact packaging solutions.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and ensure that replacement components meet or exceed the original voltage, current, and thermal specifications.
