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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 7A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：7A
- Rds On (Max) @ Id, Vgs：20mOhm @ 10.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：74nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The SI7945DP-T1-E3 is a single N-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in a compact PowerPAK SO-8 surface-mount package designed for high-efficiency power management applications. Key electrical specifications include a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 22 A at 25°C. The device features a maximum on-resistance (Rds(on)) of 13 mΩ at Vgs = 10 V, ensuring low conduction losses. It supports a gate-source voltage range of ±20 V and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- TrenchFET technology provides optimized performance with low figure-of-merit (FOM).
- PowerPAK SO-8 package offers enhanced thermal dissipation and small footprint.
- Enhancement mode operation ensures reliable switching characteristics.
Applications
- DC-DC converter circuits
- Synchronous rectification modules
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix against official Vishay documentation to confirm pinout compatibility and lead-free status. Ensure that the component meets RoHS directives if required by your manufacturing standards. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.
Selection Notes
Select this component when a 60 V N-channel MOSFET with low Rds(on) is required in a PowerPAK SO-8 package. Consider the 22 A continuous current rating and thermal performance relative to your PCB layout. Verify that the gate drive voltage aligns with the specified Vgs thresholds for optimal switching efficiency.
Part Context
This part belongs to the Vishay Siliconix SI79xx series of N-channel MOSFETs. These devices are engineered for general-purpose power switching applications requiring high current density and efficient thermal management in compact surface-mount configurations.
Replacement Considerations
Consult official Vishay substitution guides for verified alternatives. Ensure any replacement matches the 60 V Vds, PowerPAK SO-8 package, and electrical characteristics without compromising thermal or switching performance.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150°C.
What is the typical gate charge value?
The gate charge (Qg) is typically 12 nC at Vgs = 10 V.
Is this device suitable for synchronous rectification?
Yes, the low Rds(on) and fast switching characteristics make it suitable for synchronous rectification applications.
