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Product Detailed Parameters
- Description：MOSFET 2N-CH 150V 2.6A PPAK SO8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：150V
- Current - Continuous Drain (Id) @ 25°C：2.6A
- Rds On (Max) @ Id, Vgs：105mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® SO-8 Dual
- Supplier Device Package：PowerPAK® SO-8 Dual
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI7956DP-T1-E3 is a dual N-Channel MOSFET utilizing TrenchFET technology, housed in a lead-free PowerPAK SO-8 package. It features a drain-source voltage rating of 150 V and a continuous drain current of 4.1 A at 25 °C. The device exhibits a maximum on-resistance of 0.105 Ω at VGS = 10 V and 0.115 Ω at VGS = 6 V. Total gate charge is typically 26 nC at VDS = 75 V. Thermal resistance from junction to case is rated at a maximum of 2.7 °C/W, with an operating junction temperature range spanning -55 °C to +150 °C.
Feature Summary
- Dual configuration designed for space savings within the PowerPAK SO-8 footprint
- TrenchFET technology providing low on-resistance and high thermal efficiency
- Lead-free construction compliant with IEC 61249-2-21 halogen-free standards
Applications
- High efficiency primary side switches
- Half bridge converters
- Forward converters
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and specific ordering suffixes against official datasheets. Ensure storage conditions remain within specified limits to maintain reliability before assembly.
Selection Notes
Evaluate thermal management requirements based on the junction-to-ambient resistance characteristics. Verify that the application voltage does not exceed the 150 V drain-source limit. Consider the gate charge specifications when designing drive circuits for switching frequency optimization.
Part Context
This component belongs to the Vishay Siliconix Si79xx series of dual MOSFETs. It shares the PowerPAK SO-8 mechanical outline with other devices in the family but differs in electrical ratings. The part number indicates a lead-free (E3) variant packaged in tape and reel format.
Replacement Considerations
Direct replacements must match the 150 V rating and dual channel configuration. Verify pinout compatibility with the standard SO-8 footprint. Check if alternative parts meet the required on-resistance and thermal performance thresholds.
