SI823H1AB-IM1

Isolators - Gate Drivers Overview

The SI823H1AB-IM1 is a dual-channel, galvanically isolated gate driver from the Si823Hx family, manufactured by Skyworks Solutions. It features a QFN-14 surface-mount package and provides high-side and low-side drive capabilities with a 2.5 kVrms isolation rating. The device operates within a supply voltage range of 3 V to 5.5 V and supports a maximum output voltage of 30 V. Key electrical parameters include a maximum propagation delay of 30 ns, rise and fall times of 12 ns each, and an operating temperature range from -40 °C to +125 °C.

Isolators - Gate Drivers Feature Summary

• Provides galvanic isolation between control and power circuits with a 2.5 kVrms insulation voltage rating.
• Integrates two independent drivers for simultaneous high-side and low-side switching applications.
• Features a 5 V undervoltage lockout (UVLO) mechanism to ensure reliable operation during power-up and shutdown sequences.

Isolators - Gate Drivers Applications

• Motor control systems requiring isolated gate driving
• Industrial power conversion topologies
• Inverter bridge configurations

Isolators - Gate Drivers Procurement Notes

Verify the specific suffix 'IM1' against the manufacturer's official datasheet to confirm pinout compatibility and package dimensions. Ensure that the 2.5 kV isolation rating meets the safety requirements of the target application. Cross-reference the AEC-Q100 qualification status if automotive reliability standards are mandatory for the deployment environment.

Isolators - Gate Drivers Selection Notes

Select this component when a compact QFN-14 footprint is required for dual-channel isolated driving. It is suitable for designs needing symmetric 12 ns switching speeds and robust transient immunity. Consider the 5 V UVLO threshold to align with the logic interface levels of the controlling microcontroller or DSP in the system architecture.

Isolators - Gate Drivers Part Context

This part belongs to the Si823Hx series of ISODrivers, which utilize silicon dioxide (SiO2) isolation technology. The series is designed for high-speed, high-reliability applications where traditional magnetic isolation may be insufficient. The SI823H1AB-IM1 specifically addresses the need for small form factor solutions in modern power electronics.

Isolators - Gate Drivers Replacement Considerations

The SI823H1AB-IM is listed as End of Life; the IM1 variant serves as the current production version. Verify functional equivalence with other Si823Hx models sharing the QFN-14 package and 2.5 kV isolation rating before substitution.

Isolators - Gate Drivers FAQ

What is the isolation voltage rating of the SI823H1AB-IM1?

The device provides a 2.5 kVrms insulation voltage rating between the input and output channels.

Does the SI823H1AB-IM1 support both high-side and low-side driving?

Yes, it integrates two independent drivers configured for simultaneous high-side and low-side switching operations.