SI8900EDB-T2-E1

Description：MOSFET 2N-CH 20V 5.4A 10MFP
Series：TrenchFET®

SKU:91f9b1d32497 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 5.4A 10MFP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.4A
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-UFBGA, CSPBGA
Supplier Device Package：10-Micro Foot™ CSP (2x5)
Grade：-
Qualification：-

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SI8900EDB-T2-E1

Overview

The SI8900EDB-T2-E1 is a dual N-channel power MOSFET manufactured by Vishay Siliconix using TrenchFET technology. It features a 20V drain-source voltage rating and supports a continuous drain current of 5.4A. The device utilizes a 10-terminal MicroFoot CSP package with dimensions of 2mm x 3mm. Key electrical characteristics include a maximum on-resistance of 26mΩ at Vgs=4.5V, a gate charge of 17nC, and a power dissipation capacity of 1W. It operates within a temperature range of -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact surface-mount package
TrenchFET technology for optimized on-resistance and switching performance
Logic-level gate drive compatibility for efficient control

Applications

Battery protection circuits
Power management modules
Load switch applications

Procurement Notes

Verify the component authenticity through authorized Vishay distributors or certified suppliers. Confirm RoHS compliance status and check for specific tape-and-reel packaging requirements suitable for automated assembly processes. Ensure storage conditions adhere to moisture sensitivity level guidelines to maintain device reliability before soldering.

Selection Notes

Select this component when space-constrained designs require dual N-channel isolation with low on-resistance. The 20V rating suits low-voltage systems. Evaluate thermal management needs due to the small footprint and 1W dissipation limit. Compare gate charge specifications against driver capabilities to ensure adequate switching speeds without excessive losses.

Part Context

This part belongs to the SI89xx series of dual MOSFET arrays from Vishay Siliconix. These components are designed for high-density applications where board space is limited. The MicroFoot package offers superior thermal performance compared to traditional SOT packages while maintaining a minimal profile suitable for portable electronics.