SI9424BDY-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix Si9424BDY-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage of -20 V and a continuous drain current of -7.1 A at 25 °C. The device exhibits a maximum on-state resistance of 0.025 Ω at VGS = -4.5 V and -7.1 A, or 0.033 Ω at VGS = -2.5 V and -6.6 A. Total gate charge is typically 24 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• TrenchFET power MOSFET structure for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21
• RoHS Directive 2002/95/EC compliant

Single FETs, MOSFETs Applications

• Power management circuits
• Load switching applications
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free status as defined by Vishay standards. Confirm package type matches SO-8 requirements for your PCB layout. Ensure thermal design accounts for steady-state junction-to-ambient resistance ratings under your specific operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage P-channel switching applications requiring compact surface-mount packaging. Evaluate thermal dissipation capabilities against your system's ambient temperature and board copper area constraints. Verify gate drive voltage levels align with the specified RDS(on) test conditions for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si9424BDY series of P-channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within a standard SO-8 footprint. The product line emphasizes compliance with environmental directives while maintaining robust electrical characteristics for general-purpose power switching.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for direct cross-reference data. Verify pinout compatibility and absolute maximum ratings before substituting. Ensure replacement parts meet identical RoHS and Halogen-free requirements if mandated by your assembly specifications.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage is ±9 V.

Is this device suitable for high-frequency switching?

Dynamic parameters include turn-on delay time (typical 30 ns) and rise time (typical 40 ns), supporting high-speed switching applications when driven appropriately.