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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.2A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.2A
- Rds On (Max) @ Id, Vgs：20mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.14W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI9926BDY-T1-GE3 is a dual N-channel MOSFET from the Vishay Siliconix SI9 series, utilizing TrenchFET technology. It features a 20V drain-source voltage rating and an 8A continuous drain current capability in an SOIC-8 package. The device exhibits a maximum on-resistance of 18 milliohms at 10V gate drive. It operates within a junction temperature range of -55°C to +150°C with a power dissipation of 3.1W. Key switching parameters include a gate charge of 22nC, rise time of 10ns, and fall time of 12ns.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for low on-resistance performance
- Enhancement mode operation with standard logic-level gate drive compatibility
Applications
- DC-DC converter synchronous rectification
- Load switch applications
- Power management circuits requiring dual channel isolation
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets as environmental certifications may vary by production batch. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering processes.
Selection Notes
Select this component when a dual N-channel topology is required with a 20V voltage rating. Compare the 18 milliohm on-resistance against thermal constraints in the specific application environment. Verify that the SOIC-8 footprint matches the PCB layout design and that the 8A current rating exceeds peak load demands.
Part Context
This part belongs to the Vishay SI9 series of surface-mount MOSFETs. It shares the same electrical specifications as the SI9926CDY-T1-E3 variant but differs in ordering suffixes which typically denote packaging or specific manufacturing lot attributes rather than functional changes.
Replacement Considerations
The SI9926CDY-T1-E3 serves as a verified equivalent part number with identical electrical characteristics. Cross-reference pinouts and thermal resistance values before substitution to ensure mechanical compatibility.
