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SIA106DJ-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 10A/12A PPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIA106DJ-T1-GE3
- Description：MOSFET N-CH 60V 10A/12A PPAK
- Series：TrenchFET® Gen IV
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：10A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
- Rds On (Max) @ Id, Vgs：18.5mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：3.5W (Ta), 19W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SC-70-6
- Package / Case：PowerPAK® SC-70-6
Single FETs, MOSFETs datasheet and documents for SIA106DJ-T1-GE3
Single FETs, MOSFETs Overview
The SiA106DJ is a Vishay Siliconix N-Channel 60 V (D-S) MOSFET utilizing TrenchFET® Gen IV technology. It features a PowerPAK SC-70-6L package with a maximum on-state resistance of 0.0185 Ω at VGS = 10 V and 0.0225 Ω at VGS = 7.5 V. The device supports a continuous drain current of 12 A and includes 100% Rg and UIS testing.
Single FETs, MOSFETs Feature Summary
- Tuned for the lowest RDS(on) - Qoss Figure-of-Merit
- Very low RDS(on) - Qg Figure-of-Merit
- 100% Rg and UIS tested
Single FETs, MOSFETs Applications
- Primary side switch
- Synchronous rectification
- DC / DC converters
- Motor drive switch
- Boost converter
- LED backlighting
Single FETs, MOSFETs Procurement Notes
Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free configuration. Validate datasheet revisions to ensure alignment with current manufacturing specifications before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring optimized switching efficiency in compact designs. Evaluate thermal constraints based on the specific junction-to-ambient or junction-to-case resistance requirements. Ensure gate drive voltages align with the specified thresholds for optimal on-state performance.
Single FETs, MOSFETs Part Context
This single-channel enhancement mode MOSFET belongs to the TrenchFET Gen IV family. It is designed for surface mounting in the leadless PowerPAK SC-70 package, providing high power density and low thermal resistance suitable for modern portable and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other models without validating pinout, voltage ratings, and thermal characteristics.
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