SIA462DJ-T4-GE3

Description：MOSFET N-CH 30V 12A/12A PPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:04750cf21b24 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIA462DJ-T4-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 12A/12A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIA462DJ-T4-GE3

Description：MOSFET N-CH 30V 12A/12A PPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：570 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 19W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SC-70-6
Package / Case：PowerPAK® SC-70-6

Single FETs, MOSFETs datasheet and documents for SIA462DJ-T4-GE3

SIA462DJ-T4-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiA462DJ is an N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a continuous drain current of 12 A. The device offers a maximum on-state resistance of 0.018 Ω at VGS = 10 V, with typical gate charge of 5 nC. Packaged in the leadless PowerPAK SC-70-6L-Single surface-mount format, it supports junction temperatures up to 150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized performance
Leadless PowerPAK SC-70-6L package design
100% Rg tested for reliability

Single FETs, MOSFETs Applications

DC/DC converters
Synchronous buck converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist within the SiA462DJ family. Confirm that the requested variant matches the required tape-and-reel or cut-tape packaging configuration. Ensure compliance with material categorization definitions provided by the manufacturer before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage applications requiring high efficiency and fast switching speeds. The low gate charge and fast turn-off characteristics minimize ringing and shoot-through risks. Evaluate thermal management requirements based on the specified junction-to-ambient and junction-to-case thermal resistance ratings for the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the SiA462DJ series from Vishay Siliconix, designed for general-purpose switching applications. It represents a single-channel N-Channel MOSFET solution within the broader TrenchFET portfolio, offering a balance of low on-resistance and compact footprint suitable for space-constrained designs.