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SIA477EDJT-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 12V 12A PPAK SC70-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SIA477EDJT-T1-GE3
- Description：MOSFET P-CH 12V 12A PPAK SC70-6
- Series：TrenchFET® Gen III
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：13mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：3050 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：19W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® SC-70-6 Single
- Package / Case：PowerPAK® SC-70-6
Single FETs, MOSFETs datasheet and documents for SIA477EDJT-T1-GE3
Single FETs, MOSFETs Overview
The SIA477EDJT-T1-GE3 is a P-channel power MOSFET utilizing TrenchFET Gen III technology. It features a thermally enhanced PowerPAK SC-70-6L package with a drain-source voltage of -12 V and a continuous drain current of -12 A. The device offers low on-resistance, rated at 0.013 Ω at VGS = -4.5 V and 0.032 Ω at VGS = -1.8 V. Typical gate charge is 33 nC at VGS = -4.5 V. It includes built-in ESD protection with a Zener diode, achieving typical performance of 3500 V.
Single FETs, MOSFETs Feature Summary
- TrenchFET Gen III p-channel architecture for optimized switching performance
- Thermally enhanced PowerPAK SC-70-6L package providing small footprint area
- Built-in ESD protection featuring an integrated Zener diode
Single FETs, MOSFETs Applications
- Battery switch in mobile devices
- Charger switch applications
- Load switch implementations
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix to ensure compliance with lead-free and halogen-free material requirements as defined by Vishay. Confirm that the component matches the Thin PowerPAK SC-70-6L package outline and marking code B7. Validate technical specifications against the official datasheet document number 77703 prior to integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component for space-constrained portable electronics requiring efficient power management. The low on-resistance at reduced gate voltages supports battery-powered operation. Ensure thermal design accounts for junction-to-ambient resistance limits when operating without additional heatsinking.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix SIA series of P-channel MOSFETs. It utilizes advanced trench gate technology to achieve high performance within a compact surface-mount form factor. The product line targets modern consumer electronics where size and efficiency are critical constraints.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution lists or contact Vishay technical support for verified alternatives. Do not assume pin compatibility or electrical equivalence with other SC-70 packages without explicit manufacturer confirmation.
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