SIA519EDJ-T1-GE3

Overview

The SiA519EDJ-T1-GE3 is a dual N- and P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a PowerPAK SC-70-6 package. The N-channel device offers a drain-source voltage of 20 V, with an on-resistance of 40 mΩ at VGS = 4.5 V and 65 mΩ at VGS = 2.5 V. The P-channel counterpart provides a -20 V rating, featuring an on-resistance of 90 mΩ at VGS = -4.5 V and 137 mΩ at VGS = -2.5 V. Both channels support a continuous drain current of 4.5 A at TC = 25 °C. The component operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Integrates complementary N- and P-channel MOSFETs into a single leadless PowerPAK SC-70-6 package for space-constrained designs.
• Employs TrenchFET power technology to achieve low gate charge and reduced switching losses.
• Includes typical ESD protection ratings of 2000 V for the N-channel and 1000 V for the P-channel.

Applications

• DC/DC converter circuits requiring compact dual-channel solutions.
• Low-voltage load switch applications.
• Power management systems in portable electronic devices.

Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as documented by the manufacturer. Confirm the package type matches the PowerPAK SC-70-6L footprint requirements for your PCB layout. Ensure thermal design accounts for the specified junction-to-ambient resistance values under your operating conditions.

Selection Notes

Select this component when a dual complementary MOSFET configuration is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance levels. Consider the thermal derating curves if operating near maximum current limits.

Part Context

This part belongs to the SiA series of TrenchFET MOSFETs manufactured by Vishay Siliconix. It is designed for high-efficiency power switching in small form factors. The dual configuration simplifies bill of materials and assembly processes compared to using separate discrete components.

Replacement Considerations

Check datasheets for alternative dual MOSFETs in the PowerPAK SC-70-6 package. Ensure replacement parts match the 20 V rating and similar on-resistance characteristics. Verify pin compatibility and thermal performance metrics before substitution.

FAQ

What is the typical ESD protection rating for the N-channel?

The N-channel typically provides 2000 V ESD protection.

What is the maximum junction temperature for operation?

The maximum operating junction temperature is 150 °C.

How does the on-resistance vary with gate voltage?

For the N-channel, RDS(on) is 40 mΩ at VGS = 4.5 V and increases to 65 mΩ at VGS = 2.5 V.