SIA911ADJ-T1-GE3

Overview

The SiA911ADJ-T1-GE3 is a dual P-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a PowerPAK SC-70-6L package with a maximum drain-source voltage of -20 V and a continuous drain current of -4.5 A at TC = 25 °C. The device exhibits a typical on-resistance (RDS(on)) of 0.116 Ω at VGS = -4.5 V and -2.8 A. Total gate charge is typically 4.9 nC at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual P-channel configuration in a thermally enhanced leadless PowerPAK SC-70-6L package
• TrenchFET power MOSFET technology for low on-resistance and small footprint area
• Halogen-free construction compliant with RoHS standards

Applications

• Load switching for portable devices
• Power amplifier (PA) switching
• Battery management switching

Procurement Notes

Verify the component against official datasheet document number 68968. Confirm the ordering suffix matches the lead-free and halogen-free specification. Ensure the package type corresponds to the PowerPAK SC-70-6L outline. Validate that the manufacturer is Vishay Siliconix or its authorized production locations.

Selection Notes

Select this component when a compact dual P-channel switch is required for low-voltage applications. The -20 V rating suits standard portable electronics logic levels. Evaluate thermal constraints carefully, as the package limits steady-state power dissipation to 6.5 W at TC = 25 °C. Verify gate drive voltages align with the specified RDS(on) test conditions.

Part Context

This part belongs to the SiA series of dual MOSFETs designed for space-constrained portable equipment. It integrates two independent P-channel transistors into a single surface-mount package. The design targets high-density PCB layouts where minimal footprint area is critical for modern handheld and mobile device architectures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.