SIA915DJ-T1-GE3

Overview

The SiA915DJ-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -30 V drain-source voltage and a maximum continuous drain current of -4.5 A at 25 °C case temperature. The device offers an on-resistance of 0.087 Ω at VGS = -10 V and 0.145 Ω at VGS = -4.5 V. Total gate charge is typically 6 nC at VGS = -10 V. It is housed in a thermally enhanced PowerPAK SC-70-6L package with a junction-to-case thermal resistance of 12.5 °C/W.

Feature Summary

• Dual P-channel configuration within a single compact PowerPAK SC-70-6L package
• TrenchFET power MOSFET technology for low on-resistance
• Thermally enhanced leadless package design

Applications

• Power switching for motor drives in portable devices

Procurement Notes

Verify the component against the official Vishay datasheet (Document Number: 67314) to confirm electrical parameters and physical dimensions. Ensure the ordering suffix matches the required lead-free and halogen-free specifications. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before finalizing procurement.

Selection Notes

Select this component when a dual P-channel switch is required in a space-constrained portable application. Evaluate the thermal performance based on the specific ambient conditions and PCB copper area available for heat dissipation. Confirm that the gate drive voltage levels are compatible with the specified threshold and on-resistance characteristics for optimal efficiency.

Part Context

This component belongs to the SiA series of dual MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70-6L package, which provides a small footprint suitable for dense surface-mount layouts. The device integrates two independent P-channel MOSFETs into a single leadless package to save board space.

Replacement Considerations

SIA915DJ-GE3

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -4.5 A when the case temperature is maintained at 25 °C.

Does the device meet environmental compliance standards?

Yes, the SiA915DJ-T1-GE3 is compliant with the RoHS Directive 2002/95/EC and is defined as halogen-free according to IEC 61249-2-21.

What is the typical total gate charge?

The typical total gate charge is 6 nC when tested at VDS = -15 V, VGS = -10 V, and ID = -3.7 A.