SIA921EDJ-T4-GE3

$0.69

Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
Series：TrenchFET®

SKU:3bd252c449e4 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 4.5A PPAK8X8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.5A
Rds On (Max) @ Id, Vgs：59mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：7.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SC-70-6 Dual
Supplier Device Package：PowerPAK® SC-70-6 Dual
Grade：-
Qualification：-

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SIA921EDJ-T4-GE3

Overview

The Vishay Siliconix SiA921EDJ-T4-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology in a thermally enhanced PowerPAK SC-70 package. It features a drain-source voltage of -20 V and a continuous drain current of -4.5 A at 25 °C. The on-state resistance is typically 0.059 Ω at VGS = -4.5 V and 0.098 Ω at VGS = -2.5 V. Total gate charge is typically 23 nC at VGS = -10 V. Operating junction temperature ranges from -55 °C to 150 °C, with maximum power dissipation of 7.8 W at TC = 25 °C.

Feature Summary

Dual P-channel configuration within a compact PowerPAK SC-70 footprint
TrenchFET technology for low on-resistance and high-speed switching
Thermally enhanced leadless package design

Applications

Load switches for portable devices
PA switches in mobile communications
Battery protection circuits
DC/DC converters

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets RoHS and halogen-free requirements as specified by the manufacturer. Ensure compatibility with surface mount assembly processes suitable for leadless packages.

Selection Notes

Evaluate thermal management requirements based on the junction-to-ambient resistance of 65 °C/W. Verify that the gate drive voltage aligns with the specified RDS(on) conditions. Consider the package's physical dimensions when designing PCB layouts for space-constrained applications.

Part Context

This component belongs to the SiA921EDJ series manufactured by Vishay Siliconix. It is available in tape and reel packaging formats designated by the T4 suffix. The device is part of the broader portfolio of TrenchFET power MOSFETs designed for efficient power management.