SIA929DJ-T1-GE3

Overview

The SiA929DJ is a dual P-Channel MOSFET from Vishay Siliconix, utilizing TrenchFET Gen III technology. It features a thermally enhanced PowerPAK SC-70 package with dimensions of 2.05 mm by 2.05 mm. The device supports a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -4.5 A at TC = 25 °C. Maximum on-resistance (RDS(on)) values are 0.064 Ω at VGS = -10 V, 0.078 Ω at VGS = -4.5 V, and 0.120 Ω at VGS = -2.5 V. Total gate charge (Qg) is typically 6.6 nC at VGS = -4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual P-Channel configuration within a compact PowerPAK SC-70 footprint
• TrenchFET Gen III technology for low on-resistance performance
• Thermally enhanced leadless package design

Applications

• Load switch and battery management for smartphones, tablet PCs, and portable media players
• Fast battery charging circuits

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance details. Confirm that the component matches the required thermal and electrical specifications for the target application environment. Ensure compatibility with surface mount assembly processes suitable for leadless packages.

Selection Notes

Evaluate the maximum power dissipation limits based on the intended case or ambient temperature conditions. Consider the thermal resistance characteristics when designing the PCB layout to ensure reliable operation within the specified junction temperature range. Verify gate drive voltage requirements against the RDS(on) specifications.

Part Context

This component belongs to the SiA series of dual P-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SC-70 package, which is designed for space-constrained applications requiring efficient thermal management in a small form factor.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.