SIA950DJ-T1-GE3

SIA950DJ-T1-GE3

$0.48
  • Description:MOSFET 2N-CH 190V 0.95A PPAK8X8
  • Series:LITTLE FOOT®

SKU:56352120884e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 190V 0.95A PPAK8X8
  • Series:LITTLE FOOT®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):190V
  • Current - Continuous Drain (Id) @ 25°C:950mA
  • Rds On (Max) @ Id, Vgs:3.8Ohm @ 360mA, 4.5V
  • Vgs(th) (Max) @ Id:1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:90pF @ 100V
  • Power - Max:7W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:PowerPAK® SC-70-6 Dual
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Grade:-
  • Qualification:-

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SIA950DJ-T1-GE3

Overview

The SiA950DJ-T1-GE3 is a dual N-channel enhancement mode MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a maximum drain-source voltage (VDS) of 190 V and a continuous drain current (ID) of 0.95 A at TC = 25 °C. The device is housed in a thermally enhanced PowerPAK SC-70-6 package with a thin 0.75 mm profile. Key electrical parameters include a typical total gate charge (Qg) of 1.4 nC at VGS = 10 V, and a maximum on-state resistance (RDS(on)) of 3.8 Ω at VGS = 4.5 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

  • Dual N-channel configuration within a single compact PowerPAK SC-70-6 package
  • High breakdown voltage capability up to 190 V for robust circuit protection
  • Low gate charge characteristics enabling efficient switching performance
  • Thermally enhanced leadless surface-mount design for improved heat dissipation

Applications

  • DC/DC converters for portable electronic devices
  • Load switches in battery-powered applications
  • Power management circuits requiring high-voltage isolation

Procurement Notes

Verify the component authenticity by checking the manufacturer's datasheet document number 64712 and revision history. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure compatibility with standard surface mount assembly processes and verify thermal pad soldering recommendations for the specific PCB layout.

Selection Notes

Select this component when designing circuits requiring dual isolated channels with high voltage tolerance in a minimal footprint. Evaluate the RDS(on) limits against expected load currents to ensure acceptable power dissipation. Consider the low gate charge for driving efficiency in battery-operated systems where minimizing control power is critical.

Part Context

This part belongs to the SiA series of dual MOSFETs designed for space-constrained portable electronics. It represents an evolution in TrenchFET technology aimed at reducing on-resistance while maintaining high voltage ratings. The PowerPAK SC-70 package provides a balance between thermal performance and board area efficiency compared to traditional small outline packages.

Replacement Considerations

No direct public substitute part numbers are documented in the provided source material. Designers should consult official replacement guides or contact authorized distributors for cross-reference information if obsolescence occurs.

SIA950DJ-T1-GE3SIA950DJ-T1-GE3
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