Single FETs, MOSFETs SICW040N120H4-BP product image

SICW040N120H4-BP

$10.36
  • Description:SIC MOSFET,TO-247-4
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk

SKU:7fc6cc6c7d11 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

SICW040N120H4-BP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is SIC MOSFET,TO-247-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SICW040N120H4-BP

  • Description:SIC MOSFET,TO-247-4
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:52mOhm @ 30A, 20V
  • Vgs(th) (Max) @ Id:4.5V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs:229 nC @ 20 V
  • Vgs (Max):+20V, -5V
  • Input Capacitance (Ciss) (Max) @ Vds:3619 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):326W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-4
  • Package / Case:TO-247-4

Single FETs, MOSFETs datasheet and documents for SICW040N120H4-BP

SICW040N120H4-BP

Single FETs, MOSFETs Overview

The SICW040N120H4-BP is a silicon carbide N-channel MOSFET manufactured by Micro Commercial Components. It features a TO-247-4 package with a drain-source voltage rating of 1200 V and a continuous drain current of 326 A at 25°C case temperature. The device exhibits a maximum on-resistance of 40 mΩ at VGS=20V and ID=30A. Total power dissipation reaches 326 W at 25°C, dropping to 141 W at 110°C. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Silicon Carbide (SiC) technology for high-speed switching capabilities.
  • Designed to reduce heat sink requirements through superior thermal performance.
  • Features essentially zero switching losses for improved efficiency.
  • Compliant with RoHS standards and halogen-free manufacturing processes.

Single FETs, MOSFETs Applications

  • Solar Inverters
  • Uninterruptible Power Supply (UPS)
  • Photovoltaic Inverter systems
  • Battery Chargers
  • Motor Drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-BP' confirms RoHS compliance and lead-free finish status directly against the manufacturer's official documentation. Confirm the tube packing quantity of 30 pieces per tube matches your assembly line requirements. Ensure authorized distributor channels are used to guarantee genuine parts with full traceability and avoid counterfeit risks.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling up to 1200 V and robust current capacity in a standard TO-247-4 footprint. Consider the low on-resistance and fast switching speeds for high-frequency power conversion designs. Evaluate the thermal resistance characteristics to ensure adequate cooling solutions are implemented for sustained operation within the specified temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the MCC SiC MOSFET family, specifically designed for wide bandgap semiconductor applications. It replaces traditional silicon-based devices in high-efficiency power electronics. The TO-247-4 package provides a dedicated driver source pin to minimize gate loop inductance, enhancing switching performance compared to standard three-terminal packages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the SICW040N120H4 without the suffix or other MCC SiC MOSFETs with identical 1200V/40mΩ ratings in TO-247-4 packages. Verify pinout compatibility, specifically the four-pin configuration, when replacing legacy three-pin devices.

Single FETs, MOSFETs FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +175°C.

Does this device have an internal body diode?

Yes, it includes an intrinsic body diode with a forward voltage of 2.9 V at ISD=7.5A.

What is the package type?

The device is housed in a TO-247-4 package.

SICW040N120H4-BPSICW040N120H4-BP
$10.36
Buy Now