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SIDC81D120H8X1SA3 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE STANDARD 1200V 150A. Review the specifications below when checking this part for your BOM.
Single Diodes specifications for SIDC81D120H8X1SA3
- Description：DIODE STANDARD 1200V 150A
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：150A
- Voltage - Forward (Vf) (Max) @ If：2.15 V @ 150 A
- Speed：Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：27 µA @ 1200 V
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-40°C ~ 175°C
- Grade：-
- Qualification：-
Single Diodes datasheet and documents for SIDC81D120H8X1SA3
Single Diodes Overview
The SIDC81D120H8X1SA3 is a silicon carbide (SiC) Schottky diode manufactured by Infineon Technologies. It features a maximum DC reverse voltage of 1200 V and an average rectified forward current of 150 A at a case temperature of 140 °C. The component utilizes a bulk package configuration and is classified as a standard recovery diode within the discrete semiconductor product range.
Single Diodes Feature Summary
- Utilizes silicon carbide material for high-temperature operation
- Provides fast switching characteristics typical of Schottky technology
- Engineered for high-voltage power conversion applications
Single Diodes Applications
- High-efficiency power supply designs
- Industrial motor drive systems
- Uninterruptible power supply units
Single Diodes Procurement Notes
Verify the exact suffix X1SA3 to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through official Infineon documentation before integration. Ensure thermal management aligns with the 140 °C case temperature rating for rated current performance.
Single Diodes Selection Notes
Select this component for circuits requiring low reverse recovery charge and high thermal stability. Compare forward voltage drop specifications against system efficiency targets. Evaluate package thermal resistance capabilities relative to the intended heat sink or PCB layout constraints.
Single Diodes Part Context
This device belongs to Infineon's CoolSiC™ diode portfolio, designed to replace traditional silicon fast recovery diodes. It offers superior performance in terms of switching losses and thermal conductivity, enabling more compact and efficient power electronic systems.
Single Diodes Replacement Considerations
Direct replacements must match the 1200 V rating and 150 A current capacity. Verify pinout compatibility and package dimensions. Consider equivalent SiC Schottky diodes from other manufacturers if sourcing constraints exist.
Explore related parts through Rectifiers, Diodes, Discrete Semiconductor Products, all product categories.
