SIDR140DP-T1-GE3

$2.24

Description：MOSFET N-CH 25V 79A/100A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:839d9a5dad67 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIDR140DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 25V 79A/100A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIDR140DP-T1-GE3

Description：MOSFET N-CH 25V 79A/100A PPAK
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：79A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.67mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：170 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：8150 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：6.25W (Ta), 125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8DC
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIDR140DP-T1-GE3

SIDR140DP-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiDR140DP-T1-GE3 is a single N-channel MOSFET utilizing TrenchFET Gen IV technology. It features a 25 V drain-source voltage rating and a maximum on-state resistance of 670 µΩ at VGS = 10 V, or 900 µΩ at VGS = 4.5 V. The device supports a continuous drain current of 100 A (TC = 25 °C) and dissipates up to 125 W. Packaged in a leadless PowerPAK SO-8DC with top-side cooling capabilities, it operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV architecture optimized for low switching power loss through reduced gate charge and Miller charge ratios.
PowerPAK SO-8DC package design incorporates a top-side cooling feature to enhance thermal transfer efficiency.
Manufactured with 100% Rg and Unclamped Inductive Switching (UIS) testing to ensure reliability.

Single FETs, MOSFETs Applications

Synchronous rectification
High power density DC/DC conversion
Synchronous buck converter circuits
OR-ing applications
Load switching systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Confirm that the PowerPAK SO-8DC package requires appropriate surface mount soldering profiles as manual iron rework is not recommended. Ensure application designs account for the exposed copper terminal tips resulting from singulation.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, high-current applications requiring minimal conduction losses. The device is suitable for designs needing operation at lower gate drive voltages, evidenced by the specified RDS(on) at 4.5 V. Consider the thermal management requirements associated with the 125 W dissipation rating and the necessity of utilizing the top-side cooling pad for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the SiDR series of N-channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8DC package, which is distinct from standard SOIC packages due to its leadless construction and dual-sided thermal dissipation capabilities. The series focuses on high-power density solutions using advanced trench gate technology.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other SiDR series parts such as SIDR104DP-T1-RE3 for similar voltage ratings but different current capacities. Verify pinout compatibility and thermal resistance characteristics when substituting components in existing board layouts.