SIE822DF-T1-E3

$1.01

Description：MOSFET N-CH 20V 50A 10POLARPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:3a781f51ef06 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIE822DF-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 50A 10POLARPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIE822DF-T1-E3

Description：MOSFET N-CH 20V 50A 10POLARPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4200 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：5.2W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：10-PolarPAK® (S)
Package / Case：10-PolarPAK® (S)

Single FETs, MOSFETs datasheet and documents for SIE822DF-T1-E3

SIE822DF-T1-E3

Single FETs, MOSFETs Overview

The SiE822DF-T1-E3 is a Vishay Siliconix N-Channel 20 V (D-S) MOSFET utilizing TrenchFET power technology. It features an ultra-low thermal resistance PolarPAK package designed for double-sided cooling. The device supports a continuous drain current of 50 A at TC = 25 °C and 138 A based on silicon limits. On-state resistance is specified as 3.4 mΩ max at VGS = 10 V and 5.5 mΩ max at VGS = 4.5 V. Total gate charge is typically 24 nC at VGS = 4.5 V. Operating junction temperature ranges from -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET technology
Ultra low thermal resistance using top-exposed PolarPAK package for double-sided cooling
Leadframe-based encapsulated package with die not exposed
Low Qgd/Qgs ratio helps prevent shoot-through

Single FETs, MOSFETs Applications

VRM
DC/DC conversion
Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it defines compliance attributes such as lead-free or halogen-free status. Confirm that the PolarPAK package requires specialized surface mounting techniques due to its leadless design and exposed copper terminals. Ensure thermal management strategies align with the double-sided cooling capabilities of the component.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling in a compact form factor. Evaluate the thermal performance based on the specific junction-to-case and junction-to-ambient resistance values provided in the datasheet. Consider the gate charge characteristics when designing drive circuits to optimize switching speeds and minimize losses.

Single FETs, MOSFETs Part Context

This part belongs to the SiE series of N-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PolarPAK package, which provides enhanced thermal dissipation through a leadframe-based encapsulation. The product line focuses on delivering low on-resistance and robust performance for power management applications.