SIF912EDZ-T1-E3

Overview

The SIF912EDZ-T1-E3 is a dual N-channel PowerPAK power field-effect transistor manufactured by Vishay Siliconix. It features a 30V drain-source voltage rating and supports a continuous drain current of 7.4A. The device incorporates logic-level gate drive capabilities and achieves a low on-resistance of 19 milliohms at the rated current. This component is designed for high-efficiency power management applications requiring compact surface-mount packaging.

Feature Summary

• Dual N-channel configuration within a single compact package
• Logic-level gate drive capability for simplified control
• Low on-resistance of 19 milliohms at 7.4A drain current

Applications

• Hybrid, electric, and powertrain systems
• Motor drives
• Industrial equipment
• Automotive electronics

Procurement Notes

Verify the specific suffix T1-E3 against official Vishay documentation to confirm tape-and-reel packaging and lead-free status. Ensure the requested quantity aligns with standard reel sizes. Cross-reference the manufacturer part number with authorized distributor catalogs to confirm current availability and compliance with RoHS standards before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a small footprint. The 30V rating and 7.4A current capacity suit low-voltage DC-DC converters and motor control circuits. The logic-level gate threshold allows direct interfacing with standard microcontrollers or logic drivers without additional level-shifting circuitry.

Part Context

This part belongs to the SIF series of PowerPAK packages from Vishay Siliconix. These devices utilize advanced silicon technology to provide high performance in minimal space. The PowerPAK form factor offers superior thermal dissipation compared to traditional plastic packages, making it suitable for dense PCB layouts in modern electronic designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided source data.