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Product Detailed Parameters
- Description：IGBT NPT 600V 6A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：6:00 AM
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 6A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：24ns/248ns
- Test Condition：400V, 6A, 50Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The SIGC07T60SNC is a 600 V NPT technology IGBT chip with a 100 µm thickness and a die size of 2.6 x 2.6 mm². It features a maximum DC collector current (IC) of 6 A and a pulsed collector current (Icpuls) of 18 A. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.6 V at IC = 6 A. Switching characteristics include a turn-on delay time (td(on)) of 24 ns, rise time (tr) of 17 ns, turn-off delay time (td(off)) of 248 ns, and fall time (tf) of 70 ns under specified inductive load conditions.
Feature Summary
- Utilizes Non-Punch-Through (NPT) technology for robust operation.
- Features a positive temperature coefficient to facilitate easy paralleling.
- Short circuit proof capability ensures enhanced reliability.
Applications
- Motor drives
- DuoPack SKP06N60 assembly
Procurement Notes
Verify the specific ordering code required for your application needs. The datasheet lists Q67041-A4672-A003 for sawn on foil and Q67041-A4672-A002 for unsawn variants. Confirm mechanical specifications such as passivation type and metallization systems match your assembly process requirements before procurement.
Selection Notes
Select this component based on its 600 V rating and 6 A continuous current capacity. Consider the 100 µm chip thickness and 2.6 x 2.6 mm² die size for thermal management and package integration. Ensure compatibility with recommended storage environments, specifically dry nitrogen below 23°C, to maintain device integrity prior to use.
Part Context
This IGBT chip is manufactured using Infineon's NPT technology and serves as the core semiconductor element for discrete power modules. Specifically, it is designed for integration into DuoPack configurations like the SKP06N60. The chip supports operating junction temperatures up to +150 °C and includes electrostatic discharge sensitivity warnings per MIL-STD 883 standards.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature (Tj) is +150 °C.
Is the chip suitable for paralleling applications?
Yes, the device features a positive temperature coefficient, which facilitates easy paralleling.
What are the switching times under inductive load?
Under specified conditions (VCC=400V, IC=6A, RG=50 Ω), td(on) is 24 ns, tr is 17 ns, td(off) is 248 ns, and tf is 70 ns.
