SIGC121T60NR2CX7SA1

Description：IGBT NPT 600V 150A DIE
Series：-

SKU:dc63bc4452d0 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 150A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：450 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 150A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：125ns/225ns
Test Condition：300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC121T60NR2CX7SA1

Overview

The SIGC121T60NR2CX7SA1 is a silicon carbide (SiC) JFET discrete component manufactured by Infineon Technologies. It belongs to the CoolSiC G1 series and features a 1200 V breakdown voltage rating. The device is housed in a top-side cooled Q-DPAK package, designed for high-efficiency power conversion applications.

Feature Summary

Utilizes silicon carbide technology for superior thermal performance
Engineered with a top-side cooled Q-DPAK package design
Rated for 1200 V blocking voltage capability

Applications

High-frequency power supply designs
Industrial motor drive inverters
On-board electric vehicle chargers

Procurement Notes

Verify the specific suffix codes against official Infineon documentation to ensure correct binning and testing parameters. Confirm that the Q-DPAK package variant matches the required thermal dissipation needs for the target application environment.

Selection Notes

Select this component when high-temperature operation and low switching losses are critical. Ensure the circuit design supports the 1200 V rating and accommodates the thermal requirements of the top-side cooled package configuration.

Part Context

This part is part of Infineon's CoolSiC portfolio, representing advancements in wide-bandgap semiconductor technology. It complements other SiC devices aimed at improving efficiency in modern power electronics systems.