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Product Detailed Parameters
- Description：IGBT NPT 600V 10A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：30 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：21ns/110ns
- Test Condition：300V, 10A, 27Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The Infineon SIGC12T60NCX1SA5 is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology. It features a collector-emitter voltage rating of 600 V and a die size of 3.5 x 3.5 mm² with a thickness of 100 µm. The device exhibits a positive temperature coefficient, facilitating easy paralleling in module designs. Static characteristics include a maximum DC collector current dependent on thermal assembly properties and a pulsed collector current of 30 A. Operating junction temperatures range from -55 °C to +150 °C.
Feature Summary
- Non-Punch-Through (NPT) technology for robust performance
- Positive temperature coefficient enabling safe parallel operation
- Sawn on foil configuration suitable for epoxy and soft solder die bonding
Applications
- IGBT modules
- Motor drives
Procurement Notes
Verify the specific ordering code Q67041-A4688-A001 against the datasheet to ensure correct revision matching. Confirm that the X1SA5 suffix aligns with the manufacturer's standard packaging and lot traceability requirements. Ensure storage conditions remain within the specified dry nitrogen environment below 23°C to maintain component integrity prior to assembly.
Selection Notes
Select this component when designing high-reliability IGBT modules requiring NPT technology benefits. Consider the 100 µm thickness and sawn-on-foil format for compatibility with standard die-bonding processes using epoxy or soft solder. Evaluate thermal management strategies carefully, as the DC collector current rating depends heavily on the assembly's thermal properties rather than a fixed value.
Part Context
This part belongs to Infineon's discrete IGBT chip portfolio designed specifically for integration into larger power modules. Unlike packaged devices, this bare die requires external wire bonding and substrate attachment. It serves as a fundamental building block for industrial motor drives and other power conversion systems where modular scalability is required.
Replacement Considerations
Direct replacement requires verifying identical NPT technology, 600V rating, and 3.5x3.5mm die dimensions. Check if alternative chips support the same sawn-on-foil format and metallization schemes for compatible die bonding.
