SIGC12T60SNCX1SA3

Description：IGBT NPT 600V 10A DIE
Series：-

SKU:1ea4288059bf Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 10A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：10:00 AM
Current - Collector Pulsed (Icm)：30 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 10A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：29ns/266ns
Test Condition：400V, 10A, 25Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC12T60SNCX1SA3

Overview

The Infineon SIGC12T60SNC is a silicon IGBT chip utilizing Non-Punch-Through (NPT) technology. It features a 600V collector-emitter voltage rating and a 10A DC collector current capability at 25°C. The die size measures 3.5 x 3.5 mm with a thickness of 100 µm. Key electrical parameters include a maximum VCE(sat) of 2.5V at 10A, a turn-off delay time of 319ns, and an operating junction temperature range from -55°C to +150°C.

Feature Summary

Utilizes NPT technology for positive temperature coefficient characteristics
Capable of short-circuit proof operation
Facilitates easy paralleling in power modules

Applications

Motor drives
Power conversion systems

Procurement Notes

Verify the specific ordering suffix against the datasheet table to confirm physical state. The part number SIGC12T60SNC corresponds to two distinct mechanical configurations: Q67041-A4664-A001 for sawn on foil and Q67041-A4664-A002 for unsawn. Ensure the selected variant matches the intended assembly process requirements.

Selection Notes

Select this component for applications requiring robust high-voltage switching with inherent thermal stability. The NPT architecture supports parallel operation without complex balancing circuits. Verify that the assembly environment accommodates the specified wire bond and die bond material constraints.

Part Context

This bare die serves as the core semiconductor element within Infineon's SGP10N60 discrete module family. It represents a specialized power component designed for integration into custom or standard power modules rather than standalone surface-mount usage.