SIGC14T60NCX7SA2

Description：IGBT NPT 600V 15A DIE
Series：-

SKU:b240fe2a820f Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 15A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 15A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：21ns/110ns
Test Condition：300V, 15A, 18Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC14T60NCX7SA2

Overview

The SIGC14T60NCX7SA2 is a CoolSiC™ MOSFET from Infineon Technologies, belonging to the 650 V G3 generation. It utilizes a TO-263-3 (D2PAK) surface-mount package and features an N-channel configuration. The device is rated for a maximum drain-source voltage of 650 V and supports continuous drain currents up to 14 A at 25°C. Key electrical parameters include a typical on-resistance of 140 mΩ at 25°C and a gate charge of approximately 18 nC at 10 V. It operates within a junction temperature range of -55°C to 175°C and complies with RoHS standards.

Feature Summary

Utilizes advanced CoolSiC™ G3 technology for high-efficiency power conversion
Features low on-resistance and fast switching characteristics
Designed for robust operation in high-temperature environments

Applications

High-frequency switch-mode power supplies
DC-DC converter stages
Industrial motor drives
On-board chargers for electric vehicles

Procurement Notes

Verify the specific suffix 'X7SA2' against official documentation to confirm tape-and-reel packaging details and compliance certifications. Confirm current availability status as component lifecycles may change. Ensure compatibility with standard D2PAK footprints during integration planning.

Selection Notes

Select this component when system requirements demand high efficiency at elevated frequencies. Compare total losses against silicon alternatives by evaluating the trade-off between conduction resistance and switching energy. Ensure thermal management solutions support the specified junction temperature limits under expected load conditions.

Part Context

This part belongs to the CoolSiC™ MOSFET family, representing Infineon's third-generation silicon carbide technology. It complements other wide-bandgap devices by offering improved figure-of-merit metrics compared to previous generations, targeting applications where size reduction and thermal performance are critical constraints.

Replacement Considerations

Direct replacements must match the 650 V rating, TO-263-3 package, and similar electrical characteristics. Verify pinout compatibility and thermal pad specifications before substitution.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.