SIGC156T60NR2CX7SA1

Description：IGBT NPT 600V 200A DIE
Series：-

SKU:cb8086a49953 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 200A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：200 A
Current - Collector Pulsed (Icm)：600 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 200A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：180ns/285ns
Test Condition：300V, 200A, 1.5Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC156T60NR2CX7SA1

Overview

The SIGC156T60NR2C is a 600 V NPT-technology IGBT chip designed for integration into power modules. It features a 100 µm die size with a 12.5 x 12.5 mm² raster and supports a DC collector current of 200 A at Tj=25 °C, with a pulsed current rating of 600 A. The device exhibits a typical saturation voltage of 1.7 V at 200 A and includes an integrated gate resistor of 5 Ω. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

NPT technology providing positive temperature coefficient for easy paralleling
Short circuit proof capability
Integrated 5 Ω gate resistor

Applications

IGBT module construction
Industrial drives

Procurement Notes

Verify the specific ordering code Q67050-A4013-A001 against procurement requirements. Confirm that the component is handled as an Electrostatic Discharge Sensitive Device per MIL-STD 883. Ensure storage conditions adhere to the recommendation of dry nitrogen at 23°C for less than six months in original containers.

Selection Notes

Select this chip for applications requiring robust short-circuit protection and high thermal stability. The NPT technology ensures reliable parallel operation due to its positive temperature coefficient. Verify compatibility with target module assembly processes, including epoxy or soft solder die bonding and aluminum wire bonding up to 500 µm.

Part Context

This component is a bare IGBT chip intended for internal use within Infineon's module manufacturing lines. It serves as the core switching element for higher-level assemblies such as the BSM 200 GD 60 DLC Econo Pack 3. It is not a standalone discrete package but a semiconductor die on foil.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. As a specialized bare chip, direct replacements require matching NPT technology, 600 V rating, and compatible mechanical dimensions.