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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 30A DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC15T60E is a bare die IGBT chip from Infineon Technologies, utilizing TRENCHSTOP™ IGBT3 technology. It features a 600V collector-emitter voltage rating and a 30A DC collector current capability at a maximum junction temperature of 175°C. The device has a die size of 3.92mm x 3.88mm with a silicon thickness of 70 µm on a 200 mm wafer. Static characteristics include a VCEsat of 1.1V to 1.9V at VGE=15V and IC=30A, and a gate-emitter threshold voltage ranging from 5.0V to 6.5V. Input capacitance is typically 1630 pF.
Feature Summary
- Utilizes trench and field stop technology for low saturation voltage and short tail current.
- Features a positive temperature coefficient to facilitate easy paralleling in power modules.
- Designed for reliable solder connections using a Ni-Ag backside metal system.
Applications
- Industrial drives
- White goods inverters
- Resonant applications
Procurement Notes
Verify the specific ordering suffix against the official datasheet to confirm the exact configuration and packaging format. Ensure that the procurement channel provides documentation confirming compliance with the specified storage environment requirements for moisture-sensitive devices. Confirm that the supplier can provide necessary quality assurance data for bare die components.
Selection Notes
Select this component when designing power modules or discrete assemblies requiring high efficiency and ruggedness. Consider the thermal properties of the assembly, as switching characteristics depend heavily on mounting technology. Evaluate the need for RBSOA and SCSOA testing at the package level to ensure reliability under application-specific conditions.
Part Context
This part belongs to the TRENCHSTOP™ IGBT3 family, characterized by advanced trench gate structures and field-stop layers. It is designed for industrial power control applications where low conduction and switching losses are critical. The bare die format allows integration into custom power modules or hybrid packages.
Replacement Considerations
Direct replacement requires matching the die size (3.92mm x 3.88mm), voltage rating (600V), and current capability (30A). Verify compatibility with existing wire bonding and die attach processes. Consult Infineon for alternative bare die options within the same technology node if supply constraints exist.
FAQ
Is the SIGC15T60E qualified for automotive applications?
No, the product is not qualified according to AEC-Q100 or AEC-Q101 standards and is intended for industrial applications.
What is the recommended backside metal system for soldering?
The device uses a Ni-Ag system, and it is recommended not to consume the Ni layer completely during the production process to ensure a reliable connection.
Can switching characteristics be specified for this bare die?
No, switching characteristics and thermal properties depend strongly on the module design and mounting technology, so they cannot be specified for the bare die alone.
