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Product Detailed Parameters
- Description：IGBT NPT 600V 20A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：36ns/250ns
- Test Condition：400V, 20A, 16Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC18T60SNC is a 600V NPT technology IGBT chip with a 100µm die size. It features a positive temperature coefficient and short circuit proof capability, facilitating easy paralleling. The collector-emitter saturation voltage ranges from 1.6V to 2.5V at 20A. Switching characteristics include a turn-off delay time of up to 300ns and fall time of 76ns under specified inductive load conditions.
Feature Summary
- NPT technology for improved ruggedness
- Positive temperature coefficient for safe paralleling
- Short circuit proof design
Applications
- Motor drives
- Power inverters
- Switched-mode power supplies
Procurement Notes
Verify the specific ordering suffix (e.g., A001 for sawn on foil or A002 for unsawn) against your assembly requirements. Confirm that the component meets all electrostatic discharge sensitivity standards during handling. Ensure storage conditions adhere to the recommended dry nitrogen environment to maintain material integrity before die bonding.
Selection Notes
Select this chip for applications requiring robust short-circuit withstand capability and simplified thermal management due to its positive temperature coefficient. Consider the 4.3 x 4.3 mm die size for compatibility with existing module footprints. Evaluate the switching speed trade-offs against conduction losses for your specific frequency requirements.
Part Context
This IGBT chip serves as the core semiconductor element within Infineon's SGP20N60 discrete device package. It represents a specialized component designed for integration into larger power modules or direct assembly in custom power electronics architectures requiring high reliability and efficient current handling capabilities.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Verify pinout and electrical parameter compatibility if considering alternative NPT technology chips from other manufacturers. Ensure thermal interface materials match the emitter pad metallization specifications.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +150 °C.
Is the chip suitable for parallel operation?
Yes, the chip features a positive temperature coefficient, which facilitates easy paralleling.
What is the collector-emitter breakdown voltage?
The collector-emitter breakdown voltage is 600V.
