SIGC18T60SNCX1SA4

Description：IGBT NPT 600V 20A DIE
Series：-

SKU:c9f983dbba7e Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 20A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：36ns/250ns
Test Condition：400V, 20A, 16Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC18T60SNCX1SA4

Overview

The SIGC18T60SNC is a 600 V NPT technology IGBT chip with a 100 µm die size. It features a positive temperature coefficient and short circuit proof capability. The collector-emitter saturation voltage is typically 1.9 V at 20 A. Switching characteristics include a turn-off delay time of 250 ns and fall time of 63 ns under specified conditions.

Feature Summary

NPT technology for improved ruggedness
Positive temperature coefficient for easy paralleling
Short circuit proof design

Applications

Drives

Procurement Notes

Verify the specific ordering code (Q67041-S2856-A001 or A002) based on whether sawn-on-foil or unsawn configuration is required. Confirm thermal assembly parameters, as DC collector current depends on the thermal properties of the final assembly. Ensure storage in dry nitrogen within six months if not immediately processed.

Selection Notes

Select this chip for applications requiring robust parallel operation due to its positive temperature coefficient. Consider the 600 V rating and 20 A continuous current capability relative to the thermal management solution. Verify compatibility with standard wire bonding materials like aluminum up to 500 µm.

Part Context

This component is an IGBT chip manufactured using NPT technology by Infineon Technologies. It serves as the core semiconductor element for discrete devices such as the SGP20N60. The chip is designed for industrial power electronics applications where high reliability and switching performance are critical.