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Product Detailed Parameters
- Description：IGBT TRENCH FS 600V 75A DIE
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 75A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC39T60E is a bare die IGBT utilizing TRENCHSTOP™ IGBT3 technology with a 600V collector-emitter voltage rating. It features a 75A nominal current and a 225A pulsed current capability. The device operates within a junction temperature range of -40°C to +175°C and supports a short circuit time of 6µs at 150°C. Key electrical characteristics include a maximum VCEsat of 1.85V at 75A, an input capacitance of 4620pF, and a gate threshold voltage between 5.0V and 6.5V. The chip dimensions are 6.59mm x 5.91mm.
Feature Summary
- Utilizes TRENCHSTOP™ IGBT3 trench and field stop technology for optimized performance.
- Features low saturation voltage (VCEsat) and reduced turn-off losses.
- Designed for easy paralleling due to positive temperature coefficient behavior.
Applications
- Industrial power modules
- Discrete component integration
- Motor drives
- White goods inverters
- Resonant applications
Procurement Notes
Verify the specific ordering suffix against Infineon documentation to confirm packaging format and reel specifications. Confirm that the bare die form factor aligns with your assembly capabilities, as this component requires specialized wire bonding and die attachment processes rather than standard through-hole or surface-mount soldering.
Selection Notes
Select this component when designing high-density power modules requiring robust short-circuit withstand capability up to 6µs. Ensure thermal management solutions support operation up to 175°C junction temperature. Verify that the 75A nominal current rating meets the continuous load requirements of the target inverter topology.
Part Context
This part belongs to Infineon's TRENCHSTOP™ IGBT3 family, characterized by advanced trench gate structures and field-stop layers. It serves as a core semiconductor die intended for integration into larger power assemblies rather than standalone discrete use. The technology focuses on minimizing switching losses while maintaining reliable operation under harsh industrial conditions.
Replacement Considerations
Direct replacement requires matching the 600V rating, 75A current class, and identical die dimensions (6.59mm x 5.91mm). Verify compatibility with existing module substrate layouts and wire bond pad configurations before substituting with alternative bare dies from other manufacturers.
