SIGC42T60NCX1SA3

Description：IGBT NPT 600V 50A DIE
Series：-

SKU:6e3646e541cd Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 600V 50A DIE
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 50A
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：43ns/130ns
Test Condition：300V, 50A, 3.3Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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SIGC42T60NCX1SA3

Overview

The SIGC42T60NC is a 600 V NPT-technology IGBT chip designed for integration into discrete modules. It features a 100 µm die size with a 6.5 x 6.5 mm² raster and supports a DC collector current of 50 A at 25 °C, peaking at 150 A pulsed. The device exhibits a collector-emitter saturation voltage of 1.7 V to 2.5 V at 50 A and includes positive temperature coefficient characteristics. Switching parameters include a turn-on delay of 43 ns and a fall time of 30 ns under specified inductive load conditions.

Feature Summary

Utilizes Non-Punch Through (NPT) technology for robust high-voltage performance
Features a positive temperature coefficient to facilitate easy paralleling
Designed as a bare die for custom module assembly

Applications

Industrial motor drives
Power conversion modules
High-frequency switching applications

Procurement Notes

Verify the specific ordering code Q67041-A4692-A001 against the required revision level. Confirm that the receiving facility has appropriate ESD protection and dry nitrogen storage capabilities, as the component is sensitive to moisture and static discharge. Ensure thermal interface materials are compatible with the specified emitter metallization for reliable die bonding.

Selection Notes

Select this chip when designing custom IGBT modules requiring 600 V blocking capability with a 50 A continuous current rating. The NPT architecture provides a favorable trade-off between switching speed and short-circuit ruggedness. Consider the 100 µm thickness and aluminum-silicon emitter metallization when selecting die attach adhesives or solder alloys for optimal thermal conductivity and mechanical stability.

Part Context

This component is an internal semiconductor die intended for module manufacturers rather than end-users. It serves as the core switching element within larger power electronic assemblies. The datasheet references the FS 50 R06 YL4 module data sheet for complete system-level electrical characteristics, indicating its role as a building block for higher-power industrial solutions.

Replacement Considerations

Direct replacement requires matching the 6.5 x 6.5 mm² die dimensions and 600 V NPT specifications. Verify compatibility with existing module packaging and wire bonding processes. Consult Infineon for updated generations or alternative chips with similar current ratings if the exact part is discontinued.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150 °C.

Is this component suitable for life-support systems?

No, Infineon Technologies components may only be used in life-support devices with express written approval due to safety risks associated with failure.